features saving space hermetic sealed parts fits onto sod 323 / sot 23 footprints electrical data identical with the devices 1n4148 and 1n4448 respectively micro melf package applications extreme fast switches absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit repetitive peak reverse voltage v rrm 100 v reverse voltage v r 75 v peak forward surge current t p =1 s i fsm 2 a repetitive peak forward current i frm 450 ma forward current i f 200 ma average forward current v r =0 i fav 150 ma power dissipation p v 500 mw junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient mounted on epoxyglass hard tissue, fig. 1, 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w pb free product MCL4148 surface mount small signal diode
electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =5ma mcl4448 v f 0.62 0.72 v g i f =50ma MCL4148 v f 0.86 1 v i f =100ma mcl4448 v f 0.93 1 v reverse current v r =20v i r 25 na v r =20v, t j =150 c i r 50 a v r =75v i r 5 a breakdown voltage i r =100 a, t p /t=0.01, t p =0.3ms v (br) 100 v diode capacitance v r =0, f=1mhz, v hf =50mv c d 4 pf rectification efficiency v hf =2v, f=100mhz r 45 % reverse recovery time i f =i r =10ma, i r =1ma t rr 8 ns y i f =10ma, v r =6v, i r =0.1xi r , r l =100 t rr 4 ns characteristics (t j = 25 c unless otherwise specified) 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 figure 1. board for r thja definition (in mm) 1.2 1.2 2.4 0.6 0.6 reflow soldering figure 2. recommended foot pads (in mm) 1.4 1.4 2.8 0.7 0.7 wave soldering figure 3. recommended foot pads (in mm)
0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i forward current ( ma ) f v f forward voltage ( v ) 2.0 scattering limit t j =25 c figure 4. forward current vs. forward voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i forward current ( ma ) f v f forward voltage ( v ) 2.0 scattering limit t j =25 c figure 5. forward current vs. forward voltage 110 1 10 100 1000 i reverse current ( na ) r v r reverse voltage ( v ) 100 scattering limit t j =25 c figure 6. reverse current vs. reverse voltage 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c diode capacitance ( pf ) d v r reverse voltage ( v ) 100 2.5 f = 1 mhz t j =25 c figure 7. diode capacitance vs. reverse voltage
o u t l i n e d r a w i n g d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) m i c r o - m e l f r e v . b . 0 0 8 ( 0 . 2 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 7 1 ( 1 . 8 0 ) . 0 0 8 ( 0 . 2 0 ) . 0 4 9 ( 1 . 2 5 ) .043 (1. 1 0) . 0 4 3 ( 1 . 1 0 )
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